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2N5551 中文资料规格参数
| 技术参数 | 针脚数 | 3 |
极性 | NPN | |
耗散功率 | 625 mW | |
增益频宽积 | 300 MHz | |
最大电流放大倍数(hFE) | 250 | |
直流电流增益(hFE) | 80 | |
工作温度(Max) | 150 ℃ | |
工作温度(Min) | 55 ℃ | |
| 封装参数 | 安装方式 | Through Hole |
引脚数 | 3 | |
封装 | TO-92-3 | |
| 外形尺寸 | 长度 | 4.7 mm |
宽度 | 3.93 mm | |
高度 | 4.7 mm | |
封装 | TO-92-3 | |
| 物理参数 | 工作温度 | -55℃ ~ 150℃ |
| 其他 | 产品生命周期 | Unknown |
包装方式 | Bulk | |
制造应用 | Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial | |
| 符合标准 | RoHS标准 | RoHS Compliant |
含铅标准 | Lead Free | |
REACH SVHC标准 | No SVHC | |
REACH SVHC版本 | 2015/06/15 |
2N5551 引脚图 | 封装图 | 封装焊盘图
2N5551 引脚图
2N5551 封装图
2N5551 封装焊盘图
产品概述
FAIRCHILD SEMICONDUCTOR 2N5551 单晶体管 双极, 通用, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE
The2N5551fromFairchildis a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
.Collector to emitter breakdown voltage of 160V
.Collector to emitter saturation voltage of 200mV at 50mA collector current
.Power dissipation of 625mW
.DC collector current of 600mA
.DC current gain of 30 at Ic=50mA
.Operating junction temperature range from -55°C to 150°C
