SN74CB3Q3251RGYR点击型号即可查看芯片规格书
SN74CB3Q3251RGYR 中文资料规格参数
| 技术参数 | 输出接口数 | 1 |
通道数 | 8 | |
位数 | 8 | |
传送延迟时间 | 120 ps | |
电压波节 | 2.50 V, 3.30 V | |
带宽 | 500 MHz | |
输入数 | 8 | |
工作温度(Max) | 85 ℃ | |
工作温度(Min) | -40 ℃ | |
电源电压 | 2.3V ~ 3.6V | |
电源电压(Max) | 3.6 V | |
电源电压(Min) | 2.3 V | |
| 封装参数 | 安装方式 | Surface Mount |
引脚数 | 16 | |
封装 | VQFN-16 | |
| 外形尺寸 | 长度 | 4 mm |
宽度 | 3.5 mm | |
高度 | 0.8 mm | |
封装 | VQFN-16 | |
| 物理参数 | 工作温度 | -40℃ ~ 85℃ |
| 其他 | 产品生命周期 | Active |
包装方式 | Tape & Reel (TR) | |
| 符合标准 | RoHS标准 | RoHS Compliant |
含铅标准 | Lead Free | |
| 海关信息 | ECCN代码 | EAR99 |
SN74CB3Q3251RGYR 引脚图 | 封装图 | 封装焊盘图
SN74CB3Q3251RGYR 引脚图
SN74CB3Q3251RGYR 封装图
SN74CB3Q3251RGYR 封装焊盘图
产品概述
1 - OF- 8场效应管复用器/解复用器2.5 V / 3.3 V低电压，高带宽总线开关 1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER 2.5-V/3.3-V LOW-VOLTAGE, HIGH-BANDWIDTH BUS SWITCH
The SN74CB3Q3251 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3251 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q3251 is a 1-of-8 multiplexer/demultiplexer with a single output-enable (OE\\\\) input. The select (S0, S1, S2) inputs control the data path of the multiplexer/demultiplexer. When OE\ is low, the multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the multiplexer/demultiplexer is disabled, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
