【MUN5312DW1T1G PDF数据手册】_中文资料_(安森美 ON Semiconductor)

元器件信息   2022-11-14 10:11   242   0  

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MUN5312DW1T1G 中文资料规格参数


技术参数

额定电压(DC)

50.0 V

额定电流

100 mA

极性

NPN, PNP

耗散功率

0.385 W

击穿电压(集电极-发射极)

50 V

集电极最大允许电流

100mA

最小电流放大倍数(hFE)

60 @5mA, 10V

额定功率(Max)

250 mW

工作温度(Max)

150 ℃

工作温度(Min)

-55 ℃

耗散功率(Max)

385 mW

封装参数

安装方式

Surface Mount

引脚数

6

封装

SC-88-6

外形尺寸

长度

2 mm

宽度

1.25 mm

高度

0.9 mm

封装

SC-88-6

物理参数

工作温度

-55℃ ~ 150℃

其他

产品生命周期

Active

包装方式

Tape & Reel (TR)

符合标准

RoHS标准

RoHS Compliant

含铅标准

Lead Free

REACH SVHC版本

2015/12/17

海关信息

ECCN代码

EAR99


MUN5312DW1T1G 引脚图 | 封装焊盘图


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MUN5312DW1T1G 引脚图


aee6bb2d-63c1-11ed-bcb8-b8ca3a6cb5c4.png

MUN5312DW1T1G 封装焊盘图


产品概述


ON SEMICONDUCTOR  MUN5312DW1T1G  晶体管 双极预偏置/数字, AEC-Q101, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率, SOT-363 新

双电阻器双数字晶体管,ON Semiconductor

立创商城:1个NPN-预偏置,1个PNP-预偏置 100mA 50V

得捷:TRANS PREBIAS NPN/PNP SOT363

欧时:ON Semiconductor MUN5312DW1T1G 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 22 kΩ, 电阻比:1, 6引脚

e络盟:晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率

艾睿:Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT&s;s within? Look no further than the npn and PNP MUN5312DW1T1G digital transistor from ON Semiconductor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.

Allied Electronics:MUN5312DW1T1G NPN+PNP Digi Transistor; 100mA 50V 22 kOhm; Ratio Of 1; 6-Pin SC-88

安富利:Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R

Chip1Stop:Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R

Verical:Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R

Newark:# ON SEMICONDUCTOR  MUN5312DW1T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 22 kohm, 22 kohm, 1 (Ratio), SC-88

Win Source:TRANS PREBIAS NPN/PNP SOT363

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