NAND128W3A2BN6E 中文资料规格参数
| 技术参数 | 电源电压(DC) | 2.70V (min) |
额定电压(DC) | 3.00 V | |
工作电压 | 2.7V ~ 3.6V | |
供电电流 | 20 mA | |
针脚数 | 48 | |
位数 | 8 | |
存取时间 | 12 µs | |
内存容量 | 128000000 B | |
存取时间(Max) | 12000 ns | |
工作温度(Max) | 85 ℃ | |
工作温度(Min) | -40 ℃ | |
电源电压 | 2.7V ~ 3.6V | |
电源电压(Max) | 3.6 V | |
电源电压(Min) | 2.7 V | |
| 封装参数 | 安装方式 | Surface Mount |
引脚数 | 48 | |
封装 | TSOP-48 | |
| 外形尺寸 | 高度 | 1 mm |
封装 | TSOP-48 | |
| 物理参数 | 工作温度 | -40℃ ~ 85℃ |
| 其他 | 产品生命周期 | Unknown |
包装方式 | Each | |
制造应用 | 通信与网络, Communications & Networking | |
| 符合标准 | RoHS标准 | RoHS Compliant |
含铅标准 | Lead Free | |
REACH SVHC标准 | No SVHC | |
REACH SVHC版本 | 2014/06/16 |
NAND128W3A2BN6E 引脚图 | 封装图 | 封装焊盘图
NAND128W3A2BN6E 引脚图
NAND128W3A2BN6E 封装图
NAND128W3A2BN6E 封装焊盘图
产品概述
MICRON NAND128W3A2BN6E 闪存, 与非, 128 MB, 16K x 8位, TSOP, 48 引脚
TheNAND128W3A2BN6Eis a non-volatile NAND Flash Memory that uses the single level cell (SLC) NAND cell technology, referred to as the SLC small page family. The devices are either 128/256Mb and operate with a 3V voltage supply. The size of a page is either 528 bytes or 264 words depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the data input/output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. Each block can be programmed and erased up to 100000 cycles. To extend the lifetime of NAND flash devices it is strongly recommended to implement an error correction code. A write protect pin to provide hardware protection against program and erase operations. This device features an open-drain ready/busy output that identifies if the program/erase/read controller is currently active.
.Copy back program mode - Fast page copy without external buffering
.Status register
.Chip enable don"t care - simple interface with microcontroller
