【M29W320ET70ZE6E PDF数据手册】_中文资料_引脚图及功能_(镁光 Micron)

元器件信息   2022-11-16 09:18   123   0  

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M29W320ET70ZE6E 中文资料规格参数


技术参数

电源电压(DC)

2.70V (min)

供电电流

10 mA

针脚数

48

位数

8, 16

存取时间

70 ns

内存容量

4000000 B

存取时间(Max)

70 ns

工作温度(Max)

85 ℃

工作温度(Min)

-40 ℃

电源电压

2.7V ~ 3.6V

电源电压(Max)

3.6 V

电源电压(Min)

2.7 V

封装参数

安装方式

Surface Mount

引脚数

48

封装

TFBGA-48

外形尺寸

封装

TFBGA-48

物理参数

工作温度

-40℃ ~ 85℃ (TA)

其他

产品生命周期

Active

包装方式

Tray

制造应用

Industrial, Computers & Computer Peripherals, Consumer Electronics, Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Elec

符合标准

RoHS标准

RoHS Compliant

含铅标准

Lead Free

REACH SVHC标准

No SVHC


M29W320ET70ZE6E 引脚图 | 封装图 | 封装焊盘图


8314fe64-654c-11ed-bcbb-b8ca3a6cb5c4.png

M29W320ET70ZE6E 引脚图


8314fe65-654c-11ed-bcbb-b8ca3a6cb5c4.png

M29W320ET70ZE6E 封装图


8314fe66-654c-11ed-bcbb-b8ca3a6cb5c4.png

M29W320ET70ZE6E 封装焊盘图


产品概述


MICRON  M29W320ET70ZE6E  闪存, 引导块, 非, 32 Mbit, 4M x 8位 / 2M x 16位, CFI, 并行, TFBGA, 48 引脚

TheM29W320ET70ZE6Eis a 32MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its Read mode. The M29W320E has an array of 8 parameter and 63 main blocks. M29W320ET locates the Parameter Blocks at the top of the memory address space. M29W320E has an extra 32K word (x16 mode) or 64 Kbyte (x8 mode) block, the extended block that can be accessed using a dedicated command. The extended block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone. Each block can be erased independently so it is possible to preserve valid data while old data is erased. The blocks can be protected to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command interface of the memory.

.Asymmetrical block architecture

.Access time - 70ns

.Programming time - 10µs per byte/word typical

.Double word/quadruple byte program

.Unlock bypass program command - Faster production/batch programming

.VPP/WP Pin for fast program and write protect

.Temporary block unprotection mode

.Common flash interface - 64-bit security code

.Extended memory block - extra block used as security block or to store additional information

.Low power consumption - standby and automatic standby

.100000 Program/erase cycles per block

.Electronic signature

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