【NAND256W3A2BN6E PDF数据手册】_中文资料_引脚图及功能_(镁光 Micron)

元器件信息   2022-11-16 09:19   606   0  

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NAND256W3A2BN6E 中文资料规格参数


技术参数

电源电压(DC)

2.70V (min)

额定电压(DC)

3.00 V

供电电流

20 mA

针脚数

48

位数

8

存取时间

12 µs

内存容量

32000000 B

存取时间(Max)

12000 ns

工作温度(Max)

85 ℃

工作温度(Min)

-40 ℃

电源电压

2.7V ~ 3.6V

电源电压(Max)

3.6 V

电源电压(Min)

2.7 V

封装参数

安装方式

Surface Mount

引脚数

48

封装

TSOP-48

外形尺寸

封装

TSOP-48

物理参数

工作温度

-40℃ ~ 85℃

其他

产品生命周期

Unknown

包装方式

Tray

制造应用

消费电子产品, Industrial, 通信与网络, Consumer Electronics, 计算机和计算机周边, 工业, Computers & Computer Peripherals, Communications & Networking

符合标准

RoHS标准

RoHS Compliant

含铅标准

无铅

REACH SVHC标准

No SVHC

REACH SVHC版本

2014/06/16


NAND256W3A2BN6E 引脚图 | 封装图 | 封装焊盘图


b1f800fa-654c-11ed-bcbb-b8ca3a6cb5c4.png

NAND256W3A2BN6E 引脚图


b1f800fb-654c-11ed-bcbb-b8ca3a6cb5c4.png

NAND256W3A2BN6E 封装图


b1f800fc-654c-11ed-bcbb-b8ca3a6cb5c4.png

NAND256W3A2BN6E 封装焊盘图


产品概述


MICRON  NAND256W3A2BN6E  闪存, 与非, 256 Mbit, 32K x 8位, TSOP, 48 引脚

TheNAND256W3A2BN6Eis a 256MB non-volatile NAND Flash Memory that uses the single level cell NAND cell technology. It is referred to as the small page family. The device ranges from 128MB to 1GB and operate with either a 1.8/3V voltage supply. The size of a page is either 528 bytes or 264 Words depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the data input/output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. The device features an open-drain ready/busy output that can be used to identify if the program/erase/read controller is currently active. The use of an open-drain output allows the ready/ busy pins from several memories to be connected to a single pull-up resistor. A copy back command is available to optimize the management of defective blocks.

.High density

.Multiplexed address/data

.Pinout compatibility for all densities

.Copy back program mode - Fast page copy without external buffering

.Fast block erase - Block erase time - 2ms typical

.Status register

.Electronic signature

.Chip enable DON"T CARE - Simple interface with microcontroller

.Hardware data protection - Program/erase locked during power transitions

.Data integrity - 100000 program/erase cycles

.10 Years data retention

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