ESDA8V2-1J-充电器和电池端口的EOS和ESD Transil™保护

元器件信息   2022-11-25 14:57   245   0  

ESDA8V2-1J点击型号即可查看芯片规格书


芯片规格书搜索工具-icspec


产品概述


描述

The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages.

所有功能

  • Complies with the following standards:IEC 61000-4-2 level 4 ±15 kV (air discharge) ±8 kV (contact discharge)MIL STD 883G - Method 3015-7: class 3B HBM (human body model): ≥8kV
  • Breakdown voltage VBR = 8.2 V
  • High peak power dissipation: 500 W (8/20 μs waveform)
  • Unidirectional device
  • Low leakage current (< 0.5 μA @ 5 V) BenefitsHigh EOS and ESD protection levelHigh integrationSuitable for high density boards
  • ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge


登录icspec成功后,会自动跳转查看全文
博客评论
还没有人评论,赶紧抢个沙发~
发表评论
说明:请文明发言,共建和谐网络,您的个人信息不会被公开显示。