M95P32-I-Ultra low-power 32 Mbit Serial SPI Page EEPROM

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产品概述

描述

The M95P32-I and M95P32-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra-low power consumption, equivalent to that of EEPROM technology.

The M95P32-I and M95P32-E are a 32-Mbit SPI page EEPROM device organized as 8192 programmable pages of 512 bytes each, accessed through an SPI bus with high-performance dual- and quad-SPI outputs.

The device offers two additional (identification) pages of 512 bytes:

Additional status, configuration, and volatile registers set the desired device configuration, while the safety register gives device status information.

The M95P32-I operates with a supply voltage from 1.6 to 3.6 V over an ambient temperature range of -40 °C to +85 °C (+105 °C for the extended range). The M95P32-E offers an extended range of temperature of -40°C to +105 °C. The device supports a clock frequency of up to 80 MHz.

The M95P32-I and M95P32-E offer byte and page write instructions of up to 512 bytes. Write instructions consist of self-timed auto erase and program operations, resulting in flexible data byte management.

The devices also accept page/block/sector/chip erase commands in order to set the memory to an erased state.

The memory can then be fast-programmed by pages of 512 bytes, and further optimized using the "page program with buffer load" to hide the SPI communication latency.

所有功能

• SPI interface
  • Supports serial peripheral interface (SPI) and dual/quad outputs
  • Wide voltage range:
    • VCC from 1.6 to 3.6 V
  • Temperature range:
    • Industrial range: -40 °C to +85 °C
    • Extended range: -40 °C to +105 °C
  • Fast read:
    • 50 MHz read single output
    • 80 MHz fast read single/dual/quad output with one dummy byte
• Memory
  • 32 Mbits of page EEPROM
    • 64-Kbyte blocks, 4-Kbyte sectors
    • Page size: 512 bytes
    • Two identification pages
  • Write endurance:
    • 500 kcycles on full temperature range
  • Data retention:
    • 100 years
    • 10 years after 500 kcycles
• Ultra-low power consumption
  • 0.6 μA (typ) in deep power-down mode
  • 16 μA (typ) in Standby mode
  • 800 μA (typ) for read single at 10 MHz
  • 1.5 mA (typ) for page write
  • Current peak control < 3 mA
• High write erase performance
  • Fast Write/Prog/Erase times:
    • 2 ms (typ) for byte and page write (includes auto erase and program) for 512 bytes
    • 1.2 ms (typ) for page program (512 bytes)
    • 1.1 ms (typ) for page erase
    • 1.3 ms (typ) for sector erase
    • 4 ms (typ) for block erase
    • 15 ms (typ) for chip erase
  • Page program with buffer load
• Advanced features
  • ECC for high memory reliability (DEC,TED)
  • Schmitt trigger inputs for noise filtering
  • Output buffer programmable strength
  • Operating status flags for ISO26262
  • Software reset
  • Write protection by block, with top/bottom option
  • Unique ID upon request
  • Electronic identification
  • Support of serial flash memory discoverable parameters (SFDP) mode
  • JEDEC standard manufacturer identification
• 封装
  • ECOPACK2 (RoHS compliant) and halogen-free packages:
    • DFN8
    • SO8N
    • WLCSP8
• ESD protection:
  • HBM (human body model): 2000 V
  • CDM: 500 V