L6391-高压高侧和低侧驱动器

元器件信息   2022-12-06 10:21   238   0  

L6391点击型号即可查看芯片规格书


芯片规格书搜索工具-icspec


产品概述


描述

The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing the microcontroller/DSP.

An integrated comparator is available for protections against overcurrent, overtemperature, etc.

所有功能

  • High voltage rail up to 600 V
  • dV/dt immunity ± 50 V/nsec in full temperature range
  • Driver current capability:
    • 290 mA source
    • 430 mA sink
  • Switching times 75/35 nsec rise/fall with 1 nF load
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Integrated bootstrap diode
  • Comparator for fault protections

  • Smart shutdown function
  • Adjustable deadtime
  • Interlocking function
  • Compact and simplified layout
  • Bill of material reduction
  • Effective fault protection
  • Flexible, easy and fast design

电路原理图

a3edc18c-750c-11ed-bcc5-b8ca3a6cb5c4.png

登录icspec成功后,会自动跳转查看全文
博客评论
还没有人评论,赶紧抢个沙发~
发表评论
说明:请文明发言,共建和谐网络,您的个人信息不会被公开显示。