L6393-半桥栅极驱动器

L6393点击型号即可查看芯片规格书

芯片规格书搜索工具-icspec

产品概述

描述

The L6393 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V.

The logic inputs are CMOS/TTL compatible down to 3.3 V for the easy interfacing microcontroller/DSP.

The IC embeds an uncommitted comparator available for protections against overcurrent, overtemperature, etc.

所有功能

• High voltage rail up to 600 V
• dV/dt immunity ± 50 V/nsec in full temperature range
• Driver current capability:
  • 290 mA source,
  • 430 mA sink
• Switching times 75/35 nsec rise/fall with 1 nF load
• 3.3 V, 5 V CMOS/TTL input comparators with hysteresis
• Integrated bootstrap diode

• Uncommitted comparator
• Adjustable deadtime
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design

电路原理图