2N7002点击型号即可查看芯片规格书
2N7002 中文资料规格参数
| 技术参数 | 额定电压(DC) | 60.0 V |
额定电流 | 115 mA | |
额定功率 | 200 mW | |
针脚数 | 3 | |
漏源极电阻 | 1.2 Ω | |
极性 | N-Channel | |
耗散功率 | 200 mW | |
阈值电压 | 2.1 V | |
漏源极电压(Vds) | 60 V | |
漏源击穿电压 | 60.0 V | |
栅源击穿电压 | ±20.0 V | |
连续漏极电流(Ids) | 120 mA | |
输入电容(Ciss) | 50pF @25V(Vds) | |
额定功率(Max) | 200 mW | |
工作温度(Max) | 150 ℃ | |
工作温度(Min) | -55 ℃ | |
耗散功率(Max) | 0.2 W | |
| 封装参数 | 安装方式 | Surface Mount |
引脚数 | 3 | |
封装 | SOT-23-3 | |
| 外形尺寸 | 长度 | 2.92 mm |
宽度 | 1.3 mm | |
高度 | 0.93 mm | |
封装 | SOT-23-3 | |
| 物理参数 | 工作温度 | -55℃ ~ 150℃ (TJ) |
| 其他 | 产品生命周期 | Active |
包装方式 | Tape & Reel (TR) | |
制造应用 | Power Management, Motor Drive & Control, Audio | |
| 符合标准 | RoHS标准 | RoHS Compliant |
含铅标准 | Lead Free | |
REACH SVHC标准 | No SVHC | |
REACH SVHC版本 | 2015/06/15 | |
| 海关信息 | ECCN代码 | EAR99 |
香港进出口证 | NLR |
2N7002 引脚图 | 封装图 | 电路图 | 封装焊盘图
2N7002 引脚图
2N7002 封装图
2N7002 电路图
2N7002 封装焊盘图
产品概述
FAIRCHILD SEMICONDUCTOR 2N7002 晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
The2N7002is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
.High density cell design for extremely low RDS (ON)
.High saturation current capability
.Voltage controlled small signal switch
.Rugged and reliable
