FDA59N30点击型号即可查看芯片规格书
FDA59N30 中文资料规格参数
| 技术参数 | 针脚数 | 3 |
漏源极电阻 | 0.047 Ω | |
耗散功率 | 500 W | |
阈值电压 | 5 V | |
漏源极电压(Vds) | 300 V | |
上升时间 | 575 ns | |
输入电容(Ciss) | 4670pF @25V(Vds) | |
额定功率(Max) | 500 W | |
下降时间 | 200 ns | |
工作温度(Max) | 150 ℃ | |
工作温度(Min) | -55 ℃ | |
耗散功率(Max) | 500000 mW | |
| 封装参数 | 引脚数 | 3 |
封装 | TO-3-3 | |
| 外形尺寸 | 封装 | TO-3-3 |
| 物理参数 | 工作温度 | -55℃ ~ 150℃ |
| 其他 | 产品生命周期 | Active |
包装方式 | Tube | |
制造应用 | 照明, 电源管理 | |
| 符合标准 | RoHS标准 | |
含铅标准 | Lead Free |
FDA59N30 引脚图 | 封装焊盘图
FDA59N30 引脚图
FDA59N30 封装焊盘图
产品概述
FDA59N30 系列 300 V 0.047 Ohms N 沟道 Mosfet TO-3PN
TheFDA59N30is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode"s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET"s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
.Low gate charge
.100% Avalanche tested
