IR2136PBF点击型号即可查看芯片规格书
IR2136PBF 中文资料规格参数
| 技术参数 | 电源电压(DC) | 10.0V (min) |
上升/下降时间 | 125ns, 50ns | |
输出接口数 | 6 | |
输出电压 | 620 V | |
输出电流 | 200 mA | |
针脚数 | 28 | |
耗散功率 | 1.5 W | |
上升时间 | 190 ns | |
下降时间 | 75 ns | |
下降时间(Max) | 75 ns | |
上升时间(Max) | 190 ns | |
工作温度(Max) | 125 ℃ | |
工作温度(Min) | -40 ℃ | |
耗散功率(Max) | 1500 mW | |
电源电压 | 10V ~ 20V | |
电源电压(Max) | 20 V | |
电源电压(Min) | 10 V | |
| 封装参数 | 安装方式 | Through Hole |
引脚数 | 28 | |
封装 | PDIP-28 | |
| 外形尺寸 | 长度 | 39.75 mm |
宽度 | 14.73 mm | |
高度 | 6.35 mm | |
封装 | PDIP-28 | |
| 物理参数 | 工作温度 | -40℃ ~ 150℃ (TJ) |
| 其他 | 产品生命周期 | Active |
包装方式 | Tube | |
制造应用 | Power Management, 电源管理 | |
| 符合标准 | RoHS标准 | RoHS Compliant |
含铅标准 | Lead Free | |
REACH SVHC版本 | 2015/12/17 | |
| 海关信息 | ECCN代码 | EAR99 |
IR2136PBF 电路图
IR2136PBF 电路图
产品概述
INFINEON IR2136PBF 驱动器, MOSFET, 3相桥接, 10V-20V电源, 350mA输出, 380ns延迟, DIP-28
MOSFET 和 IGBT 栅极驱动器，三相，Infineon
一系列半桥驱动器设计用于控制 3 相应用中的 MOSFET 和 IGBT 功率设备。该设备具有 600 V 的最大阻塞电压，且使用 CMOS 和 TTL 兼容的信号级别进行低侧控制。
得捷:IC GATE DRVR HALF-BRIDGE 28DIP
立创商城:半桥 IGBT MOSFET 灌:200mA 拉:350mA
欧时:### MOSFET 和 IGBT 栅极驱动器，三相，Infineon
### MOSFET 和 IGBT 驱动器，Infineon (International Rectifier)
贸泽:Gate Drivers 3Phs Drvr Sft Trn On Invrt 200ns
e络盟:驱动器, MOSFET, 3相桥接, 10V-20V电源, 350mA输出, 380ns延迟, DIP-28
艾睿:Driver 600V 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin PDIP W Tube
安富利:The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3 V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an over current or undervoltage shutdown has occurred. Over current fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
Chip1Stop:MOSFET DRVR 600V 6-OUT Hi/Lo Side 3-Phase Brdg Inv 28-Pin PDIP W
TME:Driver; high-/low-side switch, gate driver; -350÷200mA; 1.5W
Verical:Driver 600V 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin PDIP W Tube
Newark:# INFINEON IR2136PBF DRIVER, MOSFET, 3PH HIGH/LOW, 2136
