M29W160ET70N6E点击型号即可查看芯片规格书
M29W160ET70N6E 中文资料规格参数
| 技术参数 | 电源电压(DC) | 2.70V (min) |
供电电流 | 10 mA | |
针脚数 | 48 | |
位数 | 8, 16 | |
存取时间 | 70 ns | |
内存容量 | 2000000 B | |
存取时间(Max) | 70 ns | |
工作温度(Max) | 85 ℃ | |
工作温度(Min) | -40 ℃ | |
电源电压 | 2.7V ~ 3.6V | |
电源电压(Max) | 3.6 V | |
电源电压(Min) | 2.7 V | |
| 封装参数 | 安装方式 | Surface Mount |
引脚数 | 48 | |
封装 | TSOP-48 | |
| 外形尺寸 | 高度 | 1 mm |
封装 | TSOP-48 | |
| 物理参数 | 工作温度 | -40℃ ~ 85℃ |
| 其他 | 产品生命周期 | Active |
包装方式 | Tray | |
制造应用 | Industrial, 工业, 计算机和计算机周边, Computers & Computer Peripherals, 消费电子产品, Communications & Networking, 通信与网络, Consumer Electronics | |
| 符合标准 | RoHS标准 | RoHS Compliant |
含铅标准 | Lead Free | |
REACH SVHC标准 | No SVHC | |
REACH SVHC版本 | 2015/12/17 |
M29W160ET70N6E 引脚图 | 封装图 | 封装焊盘图
M29W160ET70N6E 引脚图
M29W160ET70N6E 封装图
M29W160ET70N6E 封装焊盘图
产品概述
MICRON M29W160ET70N6E 闪存, 引导块, 非, 16 Mbit, 2M x 8位 / 1M x 16位, CFI, 并行, TSOP, 48 引脚
TheM29W160ET70N6Eis a 16MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command Interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
.Access time - 70ns
.Programming time - 10µs per byte/word typical
.Program/erase controller - embedded byte/word program algorithms
.Erase suspend and resume modes - read and program another block during erase suspend
.Unlock bypass program command - Faster production/batch programming
.Temporary block unprotection mode
.Common flash interface - 64-bit security code
.Low power consumption - standby and automatic standby
.100000 Program/erase cycles per block
.Electronic signature
