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产品概述
描述
The L6399 is a high voltage device manufactured using BCD™ “offline” technology. It is a single- chip half bridge gate driver for N-channel power MOSFETs or IGBTs.
The high-side (floating) section is designed to withstand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy microcontroller/DSP interfacing.
所有功能
- High voltage rail up to 600 V
- dV/dt immunity ± 50 V/ns over full temperature range
- Driver current capability:
- 290 mA source
- 430 mA sink
- Switching times 75/35 ns rise/fall with 1 nF load
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Integrated bootstrap diode
- Internal 320 ns deadtime
- Interlocking function
- Compact and simplified layout
- Bill of material reduction
- Flexible, easy and fast design
电路原理图
