L6392-高压高侧和低侧驱动器

L6392点击型号即可查看芯片规格书

芯片规格书搜索工具-icspec

产品概述

描述

The L6392 is a high voltage device manufactured with the BCD™ “offline” technology. It is a single chip half bridge gate driver for the N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.

The IC embeds an operational amplifier suitable for advanced current sensing in applications such as field oriented motor control.

所有功能

• High voltage rail up to 600 V
• dV/dt immunity ± 50 V/nsec in full temperature range
• Driver current capability:
  • 290 mA source
  • 430 mA sink
• Switching times 75/35 nsec rise/fall with 1 nF load
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Integrated bootstrap diode

• Operational amplifier for advanced current sensing
• Adjustable deadtime
• Interlocking function
• Compact and simplified layout
• Bill of material reduction
• Flexible, easy and fast design

电路原理图